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PS7802A-1A
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Turn-on Time
Turn-off Time
Diode
MOS FET
Coupled
Forward Voltage
Reverse Current
Off-state Leakage Current
Output Capacitance
LED On-state Current
On-state Resistance
*1, 2
*1, 2
Isolation Resistance
Isolation Capacitance
*3
Equivalent Rise Time
V F
I R
I Loff
C out
I Fon
R on
t on
t off
R I-O
C I-O
ERT
I F = 5 m A
V R = 5 V
V D = 4 0 V
V D = 0 V , f = 1 M H z
I L = 2 5 0 m A
I F = 5 mA, I L = 250 mA
I F = 5 mA, V O = 5 V, R L = 500 Ω ,
PW ≥ 0 . 5 m s
V I-O = 0.5 kV DC
V = 0 V , f = 1 M H z
I F = 5 mA, t r (in) = 25.0 ps,
1 0
9
1 . 1
0 . 1
1 1 . 5
1.1
0.05
0 . 0 5
0 . 3
45
1 . 4
5 . 0
1 0
4
1.6
0.25
0 . 2 5
V
μ A
n A
p F
m A
Ω
ms
Ω
p F
ps
V = 2 5 0 m V , 5 0 Ω termination
*1 Test Circuit for Switching Time
I F
Pulse Input
V L
Input
50%
0
I n p u t m o n i t o r
V O m o n i t o r
V O = 5 V
90%
Output
R in
R L
t on
t off
10%
*2 The turn-on time and turn-off time are specified as input-pulse width ≥ 0.5 ms.
Be aware that when the device operates with an input-pulse width less than 0.5 ms, the turn-on time and turn-off
time will increase.
*3 ERT (Equivalent Rise Time) measurement
ERT =
t r (out) 2 – t r (in) 2
Input
Output
250 mV
250 mV
t r (in)
t r (out)
90%
10%
90%
10%
4
Data Sheet PN10686EJ02V0DS
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